In:
Semiconductor Science and Technology, IOP Publishing, Vol. 36, No. 5 ( 2021-05-01), p. 055019-
Abstract:
A novel 3300 V high voltage carrier stored trench bipolar transistor (CSTBT) with common anode polysilicon diodes gate structure (CAPD-CSTBT) is proposed. The PN junctions and N + emitter region in the polysilicon gate structure are beneficial for reducing the Miller capacitance by 88.1% and the input capacitance by 26.0%, while due to the polysilicon PN junction barrier, the forward and reverse gate bias voltage will not be affected. As a result, the transient energy loss could be decreased by 32.2% with the same range of R g . Since the displacement current is shielded by the embedded emitter on the bottom of the CAPD gate structure, the (d I CE / d t ) max / I Load is lower than that of the Fin-P-CSTBT by 81.8% on average with the same range of turn-on energy loss. Furthermore, the proposed structure features a 58.7% lower (d V KA / d t ) max / V cc value for the free-wheeling diode on average. By Fourier transformation, the proposed structure represents lower amplitudes for the I CE and V KA spectrums during the turn-on period, which is a drastic suppression of electromagnetic interference noise.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/abeff7
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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