In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 6S ( 2010-06-01), p. 06GG12-
Abstract:
Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S -parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.06GG12
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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