In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. SC ( 2019-06-01), p. SCCB36-
Abstract:
Traps in MOVPE-grown Mg-doped GaN samples composed of p + /p − /n + structures were investigated using low-frequency capacitance deep-level transient spectroscopy (DLTS). A drop-off in capacitance with decreasing temperature was observed. This is caused by the longer RC time constant of the diode with lower temperature, which is due to a decrease in the number of ionized Mg acceptors (which have a high ionization energy). This limits the use of lower temperatures in DLTS measurements. To extend DLTS to a lower temperature (105 K), DLTS using a capacitance measurement frequency of 1 kHz was applied. Thus, we can quantitatively discuss concentrations of traps with shallow energy levels. We obtained a nearly one-to-one relation between H a ( E V +0.29 eV) and H d ( E V +0.88 eV) in the p-type layer, which strongly supports the theoretical calculation that a carbon on a nitrogen site forms donor-like (H a ) and acceptor-like (H d ) states.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/1347-4065/ab0408
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2019
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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