In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4S ( 2001-04-01), p. 2775-
Abstract:
The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi 2 gates was demonstrated. First, the deposition process of CoSi 2 was optimized. Stoichiometric CoSi 2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300°C was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi 2 gates formed at 400°C. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 ×10 -3 for the 5 nm CoSi 2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm -1 . Thus, the CoSi 2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm -1 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2775
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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