In:
Advanced Materials, Wiley, Vol. 35, No. 22 ( 2023-06)
Abstract:
Surface trap as intrinsic defects‐mediated non‐radiative charge recombination is a major obstacle to achieving the reliable fabrication of high‐efficiency and large‐area perovskite photovoltaics. Here a CS 2 vapor‐assisted passivation strategy is proposed for perovskite solar module, aiming to passivate the iodine vacancy and uncoordinated Pb 2+ caused by ion migration. Significantly, this method can avoid the disadvantages of inhomogeneity film caused by spin‐coating‐assisted passivation and reconstruction of perovskite surface from solvent. The CS 2 vapor passivated perovskite device presents a higher defect formation energy (0.54 eV) of iodine vacancy than the pristine (0.37 eV), while uncoordinated Pb 2+ is bonded with CS 2 . The shallow level defect passivation of iodine vacancy and uncoordinated Pb 2+ has obviously enhanced the device efficiencies (25.20% for 0.08 cm 2 and 20.66% for 40.6 cm 2 ) and the stability, exhibiting an average T 80 ‐lifetime of 1040 h working at the maximum power point, and maintaining over 90% of initial efficiency after 2000 h at RH = 30% and 30 °C.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.202211593
Language:
English
Publisher:
Wiley
Publication Date:
2023
detail.hit.zdb_id:
1474949-X
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