In:
Semiconductor Science and Technology, IOP Publishing, Vol. 36, No. 5 ( 2021-05-01), p. 055011-
Abstract:
ZnGa 2 O 4 films with different nitrogen impurity concentrations were deposited using radio frequency magnetron sputtering in an ammonia (NH 3 )/Ar gas mixture and were post-annealed at different temperatures, ranging from 600 °C to 900 °C, in NH 3 atmosphere. The influence of ammonia partial pressure ratio and nitridation temperature on the microstructure, surface morphology, nitrogen doping profile, and optical properties has been investigated. The optical band gap of ZnGa 2 O 4 , under in-situ nitrogen-doping, decreases from 4.6 to 4.1 eV but the primitive ZnGa 2 O 4 crystalline structure does not change. On nitridation, the optical band gap gradually decreases from 4.6 to 2.1 eV and the ZnGa 2 O 4 changes into a zinc gallium oxynitride quaternary alloy structure. Secondary ion mass spectrometry analysis revealed that nitrogen atoms were uniformly distributed in the film. The narrowing, by more than 40%, of the optical band gap is attributed to the hybridization of Zn3d and N2p orbits promote p-d repulsion in the top of the valence band, and the formation of hexagonal wurtzite phase.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/abefa2
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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