In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DC13-
Abstract:
We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary metal–oxide–semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O + ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without polycrystallizing the semiconductor layers, by optimizing O + ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets Δ E C and Δ E V can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing Δ E C . Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DC13
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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