In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 2 ( 2010-07-12)
Abstract:
A Be δ-doped GaAs/AlAs three quantum wells emitter in the terahertz range is fabricated and electroluminescence is investigated. An electroluminescence peak centered at 23.4 meV with a full width at half maximum of 4.2 meV is observed under a bias of 2 V at low temperature (T=4.5 K). The emission peak is attributed to the 2p to 1s internal transitions of the Be acceptors in the center of δ-doped GaAs quantum well. The current-voltage characteristics of the device measured at different temperatures demonstrate a strong negative differential resistance and temperature dependence.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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