In:
Applied Physics Letters, AIP Publishing, Vol. 103, No. 3 ( 2013-07-15)
Abstract:
Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient spectroscopy (CID-DLTS). For both structures with different barrier materials, the same drain-access electron trap at EC−0.57 eV dominates the drain-controlled CID-DLTS trap spectrum. This suggests that the physical source of this trap, previously associated with drain-lag, is not present in the barrier but instead is likely to reside in the GaN-buffer. Gate-controlled CID-DLS measurements, which are preferentially sensitive to the barrier under the gate, reveal different trap spectra for the two HEMTs, showing that choice of barrier materials can influence under-gate trap signatures.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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