In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4R ( 2004-04-01), p. 1566-
Abstract:
Ruthenium (Ru) thin films were fabricated on TiN, as well as on SiO 2 , by metal-organic chemical vapor deposition using tris(2,4-octanedionato)ruthenium. We characterized the Ru films grown on TiN, and compared them with the films prepared on SiO 2 . The Ru films deposited on TiN showed weak crystallinity and random grain orientation similar to the films on SiO 2 , but revealed notably rougher surfaces than the films on SiO 2 . Moreover, deposition rates on TiN were lower than those on SiO 2 . These properties of the Ru films grown on TiN originated from the difficulties in nucleation and growth at the initial stage of the deposition. The inferior surface flatness and deposition rate could cause structural instability and poor coverage of the Ru electrode at the bottom of a deep concave hole for a three-dimensional capacitor where the Ru film was in contact with a diffusion barrier metal TiN plug.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1566
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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