In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 1R ( 1987-01-01), p. 55-
Abstract:
Transport of an electron-hole droplet and the creation of a strain-confined electron-hole liquid in strained Ge doped with a deep impurity Zn were investigated by means of spatial resolution measurements of the recombination luminescence from normal e-h drops as well as a strain-confined large e-h drops under cw-Ar + -laser excitation. A simple drift model is proposed. The drift mobility of an e-h pair composing the droplet decreases from (8.7±0.3)×10 5 cm 2 /Vs in pure Ge to (4.5±0.2)×10 5 cm 2 /Vs in Zn-doped Ge at 1.8 K. Spatial distribution profiles of free and bound excitons coexisting with e-h drops at 4.2 K are also presented.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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