In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. 1 ( 2021-01-01), p. 011003-
Abstract:
P-type semiconductors are indispensable for achieving complementary metal oxide semiconductor and integrated circuits based on two-dimensional (2D) semiconductors, and tungsten diselenide (WSe 2 ) and molybdenum ditelluride (MoTe 2 ) are the promising channel materials for PMOS. In this work, we report on the charge trapping effects on hysteretic behavior and field-effect mobility ( μ FE ) of the p-type WSe 2 and MoTe 2 FETs using fast pulsed current–voltage ( I – V ) measurements. The hysteresis is reduced by nearly 98% via ramped pulsed measurements, and μ FE is significantly enhanced via single pulse measurements by minimizing the charge trapping. Moreover, WSe 2 FETs are found to be more susceptible to the charge trapping effects compared with MoTe 2 FETs; WSe 2 FETs exhibit more pronounced enhancement of μ FE and reduction of hysteresis. The intrinsic electrical characteristics of p-type 2D FETs under minimized charge trapping conditions can be investigated using the pulsed I – V characterizations.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abd6d5
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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