In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2409-
Abstract:
Fixed oxide charges in HfO 2 thin films have been characterized by photoreflectance spectroscopy (PRS). HfO 2 films were deposited on Si by pulsed laser deposition (PLD) in N 2 , O 2 and a mixture of these gases. PRS spectral intensity decreases with increasing positive charge in a film. HfO 2 deposited in N 2 has larger positive charges than that deposited in O 2 because of smaller PRS spectral intensity of the former. It is confirmed by ArF laser irradiation that this positive charge is caused by oxygen defects in HfO 2 . Moreover, the effects of rapid thermal annealing (RTA) on HfO 2 /Si have been evaluated by PRS. The PRS spectral intensity becomes maximum by RTA at 600°C in N 2 or O 2 . It is suggested that the suitable temperature for the RTA of the HfO 2 /Si structure prepared by PLD is 600°C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2409
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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