In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 21, No. 1R ( 1982-01-01), p. 28-
Abstract:
A variety of silicon-oxygen clusters have been induced in CZ–Si crystals by multi-step annealing at temperatures between 450 and 800°C. Five-step annealing (450°C, 100 h+500°C, 40 h+600°C, 20 h+700°C, 20 h+800°C, 20 h) has generated oxygen-related donors at a concentration of more than 10 15 cm -3 . The silicon-oxygen clusters were investigated using infrared absorption, resistivity, photoluminescence and TEM. In carbon-lean CZ–Si crystals, oxygen-related donors, which are stable at 700–800°C, were found to be related to both oxygen clusters nucleated at dislocation dipoles and to the so-called thermal donors. However, in carbon-rich CZ–Si crystals, oxygen-related donors, which are stable at 700–800°C, were related to oxygen clusters nucleated at carbon atoms, which can gather many oxygen atoms without forming dislocation dipoles.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1982
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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