In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 1A ( 1999-01-01), p. L68-
Abstract:
To understand the surface dependence of chemical vapor deposition using
tetraethylorthosilicate and O 3 , the evolution of the morphology of 5.3-µm-thick oxide
films deposited on thermal oxide was observed by scanning electron microscopy. The surface roughness and low etching resistance of the films was caused by different growth
rates at different surface sites. Some sites grow much faster that other sites, ev olving
from island, to tree, and finally to continuous films. Because of this growth sequence, the film has high porosity and is rough. This growth mode might be caused by site-dependent
tetraethylorthosilicate absorption rates.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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