In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1456-1458
Abstract:
Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts=300–320 °C and the flux ratio of PAs4/PZn∼1.5–4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of −3.4×10−4.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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