In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 12R ( 1986-12-01), p. 1795-
Abstract:
As a high quality narrow bandgap material, hydrogenated and fluorinated amorphous silicon germanium (a-SiGe:H:F) by a glow discharge decomposition of SiF 4 +GeF 4 +H 2 was systematically investigated. Microcrystalline (µc) Ge was found to be obtained when the GeF 4 gas flow ratio is high, and µc-Si can be observed when the substrate temperature is high. These results indicate a strong influence of the formation of microcrystalline structures on film properties. More than 10 7 rectification ratio was obtained for a-SiGe:H:F Schottky diodes at a bias voltage of 1 V. The collection efficiency at the wavelength of 800 nm was improved to 32% with p-SiC:H (hydrogenated amorphous silicon carbide)/i-SiGe:H:F/n-Si:H(hydrogenated amorphous silicon) diodes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.1795
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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