In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 4B ( 1993-04-01), p. L620-
Abstract:
Epitaxially grown CeO 2 layers on (100) Si substrates are analyzed using the Rutherford backscattering spectrometry combined with th e channeling technique. By construction of stereographic projections for CeO 2 layers and Si substrates from channeling dip patterns, the correlations between overgrown layers and substrates are clearly revealed: CeO 2 layers on (100) Si substrates have the (110) orientation. It has also been revealed that CeO 2 has a double domain structure: [001] CeO 2 ∥ [011̄] Si and [11̄0] CeO 2 ∥ [011̄] Si, whereas planes of (110) in CeO 2 and (100) in Si are parallel in both configurations. It is reported that in this system the (110) epitaxial orientation is not exactly parallel to the (100) orientations in Si.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L620
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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