In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4S ( 1999-04-01), p. 2345-
Abstract:
We have investigated the influences of impurities in Si
substrates on the oxidation processes and local bonding structures of silicon dioxide (SiO 2 ) films on deuterium- (D-) terminated
Si(100) surfaces by high-resolution electron energy loss spectroscopy. It is found that the oxidation processes such as the oxidation rate
and the preferential adsorption of oxygen (O) atoms on one of the two back bonds of a surface Si atom are hardly influenced by the impurity
element and the impurity concentration. Moreover, boron (B) atoms promote the relaxation of SiO 2 films by changing the Si-O force
constant. This effect of B atoms is considered to originate from a long-range interaction such as the Coulomb interaction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2345
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink