In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 3 ( 2003-05-01), p. 1027-1031
Abstract:
Multilayer VOx films are reported to improve the infrared (IR) detecting characteristics for application as an IR active layer in a microbolometer. Multilayer VOx films formed from the V2O5/V/V2O5 thin film structure showed some advantages in electrical property control and more effective formation of typically unstable vanadium oxide phases. These phases are difficult to achieve by single-layer VOx film fabrication with conventional reactive sputtering. Multilayer VOx films were fabricated by low temperature oxygen annealing at 300 °C after the alternating deposition of stable V and V2O5 layer using rf sputtering. The electrical measurement and microstructural analysis of annealed films were performed to evaluate the advantage of multilayer VOx film fabrication. Owing to the well-controlled mixed phase formation, including V2O3, VO2, and V2O5 in the annealed V2O5/V/V2O5 multilayer film, the temperature coefficient of resistance value and resistivity of the new multilayer VOx film could be increased up to −2.49%/K and reduced less than 0.1 Ω cm, respectively. A single microbolometer pixel of 50×50 μm2, applying this multilayer VOx film, showed total microbolometer resistance of below 20 kΩ to achieve low noise characteristics.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2003
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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