In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. SC ( 2023-04-01), p. SC1089-
Abstract:
In this work, the effects of post-deposition annealing (PDA) on Al 2 O 3 /GeO x /(111) and (100) n-Ge structures are experimentally studied with changing annealing temperatures from 300 °C to 650 °C in a vacuum, N 2 and O 2 atmosphere in order to clarify the stability of the MOS interface properties under high-temperature annealing. A decrease in D it and an increase in the oxide capacitance with increasing PDA temperature is observed up to 500 ∼ 600 °C, depending on the annealing atmosphere and surface orientation. The minimum D it of ∼3 × 10 11 eV −1 cm −2 is achieved for (111) Ge after PDA at 550 °C and 600 °C in N 2 /O 2 or vacuum. This trend is similar to the (100) MOS interfaces and a similar amount of minimum D it is obtained. These results suggest that the present Al 2 O 3 /GeO x /Ge interfaces are suitable for the formation of the Ge-On-insulator (GOI) back interfaces by the wafer bonding process in the Smart-cut, where high-temperature annealing is indispensable.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/acbb89
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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