In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 5B ( 1992-05-01), p. L612-
Abstract:
Planar-type metal-insulator-superconductor field-effect-transistors (MISFET) were fabricated and their current modulation characteristics were investigated. The FET had a structure of Al-gate metal/(100)SrTiO 3 -gate insulator/(001)YBa 2 Cu 3 O y -channel, where the oxide layers were grown by selective heteroepitaxy employing pulsed ArF excimer laser deposition. The FET gate was 10 µm long and 100 µm wide. Apparent field-effect modulation of drain current was seen in both the normal ( T 〉 T c ) and superconducting ( T 〈 T c ) states. In the superconducting state, not only the critical current but also flux-flow resistance were appreciably changed according to the applied gate voltage.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L612
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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