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  • 1
    Online Resource
    Online Resource
    Diameter Control of K 3 Li 2-x Nb 5+x O 15+2x Single-Crystal Fibers
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 9S ( 2000-09-01), p. 5658-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 9S ( 2000-09-01), p. 5658-
    Abstract: Potassium lithium niobate, K 3 Li 2- x Nb 5+ x O 15+2 x (KLN) single-crystal fibers have been grown using the laser-heated pedestal growth (LHPG) technique. Ceramic source rods of K 3.00 Li 1.70 Nb 5.30 O 15.6 (KLN53) and K 3.00 Li 1.85 Nb 5.15 O 15.3 (KLN51.5) were adapted to grow the fibers with the same compositions. The diameter deviations at various growth rates were estimated. For the 〈 110 〉 oriented KLN53 fibers, increase of the growth rate decreased the diameter deviation and the minimum root mean square diameter deviation was 1.8% when the growth rate was 66 mm/h. For the 〈 110 〉 oriented KLN51.5 fibers, the minimum diameter deviation was 1.7% when the growth rate was 40 mm/h. From the dielectric properties along the grown fiber, the fiber without diameter deviation was determined to have homogeneous composition along the fiber. However, the Curie temperature measurements revealed that the composition of the KLN51.5 fiber did not coincide with that of the ceramic source rods.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.5658
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    Growth of Potassium Lithium Niobate Single-Crystal Fibers by the Laser-Heated Pedestal Growth Method
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 9S ( 1997-09-01), p. 5947-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 9S ( 1997-09-01), p. 5947-
    Abstract: Single crystals of potassium lithium niobate (KLN) are known as useful materials for electrooptic applications. KLN single-crystal fibers were grown by the halogen-lamp-assisted laser-heated pedestal growth (LHPG) method and both feed and seed ceramic rods consisting of 0.3K 2 O-0.17Li 2 O–0.53Nb 2 O 5 were used for the growth. The growth conditions were a growth rate of 11 mm/h, a laser power of 1.9 W, and a halogen lamp power of 350 W for improvement of the thermal conditions around the crystallization point. The fibers obtained were approximately 0.70 mm in diameter. A transmission X-ray Laue photograph taken along the fiber growth axis indicated that the fibers were single crystals and their c -axis corresponded to the growth axis. Temperature dependence of dielectric constant and tan δ of fibers was measured. Curie temperature T c of 420°C of fibers grown by the LHPG method corresponded to that of feed rods.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.5947
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 3
    Online Resource
    Online Resource
    Domain Structures in K 3 Li 2-x Nb 5+x O 15+2x Single-Crystal Fibers Produced by the Laser-Heated Pedestal Growth Technique
    IOP Publishing ; 2001
    In:  Japanese Journal of Applied Physics Vol. 40, No. 9S ( 2001-09-01), p. 5783-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 9S ( 2001-09-01), p. 5783-
    Abstract: The ferroelectric domain structures in the 〈 110 〉 oriented K 3 Li 2- x Nb 5+ x O 15+2 x (KLN) single-crystal fibers have been found to have a bi-domain configuration from the results of the piezoelectric, and scanning nonlinear dielectric microscopy (SNDM) measurements. It is found that the directions of spontaneous polarization faced each other across the domain boundary, as opposed to the case in LiNbO 3 fibers. A new mechanism based on the stress during the growth is proposed to explain the domain structures of the KLN fibers.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.40.5783
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 4
    Online Resource
    Online Resource
    A Spin Esaki Diode
    IOP Publishing ; 2001
    In:  Japanese Journal of Applied Physics Vol. 40, No. 12A ( 2001-12-01), p. L1274-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 12A ( 2001-12-01), p. L1274-
    Abstract: We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p + -(Ga,Mn)As and nonmagnetic n + -GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn)As to the conduction band of n + -GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with ±6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga, Mn)As.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.40.L1274
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 5
    Online Resource
    Online Resource
    Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 14 ( 2022-04-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 14 ( 2022-04-04)
    Abstract: This study aims to improve the crystalline quality of 650-nm GaIn0.17N/GaIn0.38N red-emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO4 (SCAM) substrate. When using the SCAM substrate, the diffusion and/or penetration of impurities, including Mg, Sc, O, and Al, from the SCAM substrate poses as a challenge. To address this issue, we introduced an Al0.74In0.26N layer between the SCAM substrate and MQWs, which was lattice-matched to the substrate. The Al0.74In0.26N layer effectively blocked the diffusion of impurities from the SCAM substrate into the adjacent layers during the metal-organic vapor epitaxy (MOVPE) growth. For further suppression, a thick AlN layer was deposited on the back of the SCAM substrate before the MOVPE growth, which effectively suppressed impurity penetration from the growth surface. The structure proposed in this study improved the crystallinity and the surface roughness of MQWs, resulting in the improvement of internal quantum efficiency by approximately three times compared to that of the conventional sample.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0088250
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Growth of Ga 2 O 3 film on ScAlMgO 4 substrate by mist-chemical vapor deposition
    IOP Publishing ; 2023
    In:  Japanese Journal of Applied Physics Vol. 62, No. SF ( 2023-06-01), p. SF1012-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. SF ( 2023-06-01), p. SF1012-
    Abstract: ScAlMgO 4 (SAM) substrates have a trigonal structure with high cleavability in the c-plane. Because this substrate can be easily cleaved, gallium oxide (Ga 2 O 3 ) can be grown on the SAM substrate, and the difficulty in the heat dissipation of Ga 2 O 3 may be solved. Therefore, in this study, we performed Ga 2 O 3 growth on a SAM substrate using mist-chemical vapor deposition. When the growth temperature was varied at 500 °C, 600 °C, and 700 °C, ε -Ga 2 O 3 (004) grew dominantly, and the crystallinity improved with increasing temperature. Moreover, the grown ε -Ga 2 O 3 had orthorhombic structure and formed rotational domains. Furthermore, a phase transition to β -Ga 2 O 3 was achieved by annealing the resulting ε -Ga 2 O 3 on the SAM substrates. We also succeeded in separating the SAM substrates on which the Ga 2 O 3 thin films were grown.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.35848/1347-4065/acbf5a
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 7
    Online Resource
    Online Resource
    Growth of K 3 Li 2-x Nb 5+x O 15+2x Single-Crystal Fibers
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 9S ( 1999-09-01), p. 5638-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 9S ( 1999-09-01), p. 5638-
    Abstract: K 3 Li 2- x Nb 5+ x O 15+2 x (KLN) is one of the most interesting materials for various applications because of its excellent electrooptic, nonlinear optic and piezoelectric properties. The growth of K 3.0 Li 1.7 Nb 5.3 O 15.6 (KLN53: x =0.3) and K 3.00 Li 1.85 Nb 5.15 O 15.3 (KLN51.5: x =0.15) single-crystal fibers by the laser-heated pedestal growth (LHPG) method is reported. Since KLN53 fibers were grown from the 〈 110 〉 oriented seed crystal, the fibers were oriented to the 〈 110 〉 axis. On the other hand, growth of KLN51.5 fibers grown from a ceramic rod as a seed led to the 〈 111 〉 oriented crystal. The Curie temperature of the KLN53 fiber was measured. The homogeneity of the fiber was investigated by measuring the Curie temperature.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.5638
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
    Online Resource
    Online Resource
    Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO 4 (0001) substrates
    IOP Publishing ; 2022
    In:  Japanese Journal of Applied Physics Vol. 61, No. 9 ( 2022-09-01), p. 090904-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 61, No. 9 ( 2022-09-01), p. 090904-
    Abstract: GaN layers are grown on 2 inch ScAlMgO 4 (0001) nominally on-axis substrates by metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those of conventional GaN on sapphire (0001) substrates. The wafer curvature is investigated using X-ray diffraction, and the results suggest suppressed bowing in the GaN/ScAlMgO 4 heterostructures compared with the GaN/sapphire heterostructures. This result is attributed to a smaller mismatch of the thermal expansion coefficients in GaN/ScAlMgO 4 . The suppressed bowing can be beneficial for device processes.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.35848/1347-4065/ac89c2
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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