In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7R ( 2000-07-01), p. 3915-
Abstract:
Molybdenum (Mo) film as a gate electrode for high-frequency power metal oxide
semiconductor field effect transistor (MOSFET) has been investigated. The Mo films were deposited by sputtering in Ar ambient. The Mo films properties depend greatly on
the substrate temperature. An accurate pattern was realized for Mo film. Stability and reliability of Mo gates for high-frequency power vertical double-diffused metal oxide
semiconductor field effect transistors (VDMOSFETs) are as good as those of polysilicon gates. The shift of threshold voltage is below ±35 mV and the change of
gate-source leakage current is less than 5 nA under the stress condition of ±5 MV/cm for 100 h at 250°C. Power gain and drain efficiency
improvement of Mo gates for VDMOSFETs have been obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.3915
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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