In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 8R ( 1998-08-01), p. 4533-
Abstract:
The interdiffusion between layers in multilayer thin films, including
(Pb 0.97 La 0.03 )(Zr 0.66 Ti 0.34 ) 0.9875 O 3 (PLZT), SrRuO 3 , Ru, Pt and Si, was examined using
secondary ions mass spectroscopy (SIMS). The PLZT thin films deposited on Pt-coated Si-substrate using SrRuO 3 as buffer layer possessed ferroelectric properties
substantially superior to those grown on Si (or Si 3 N 4 ) surface. Procoating Ru-layer
prior to the deposition of SrRuO 3 layer further improved the electrical response of
PLZT thin films, that was ascribed to the efficient suppression of Sr- and Ru-outward diffusion into PLZT materials. The optimum properties attained are remanent
polarization P r =25.6 µC/cm 2 , coercive force E c =47.1 kV/cm, relative dielectric
constant K =1,200 and leakage current 〈 10 -5 A/cm 2 (under 50 kV/cm).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4533
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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