In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DD17-
Abstract:
A complementary metal oxide semiconductor (CMOS)-compatible WO x based resistive memory has been developed. The WO x memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (∼2 ns) and the programming voltage ( 〈 1.4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10 8 -cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO x resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DD17
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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