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    Online Resource
    AIP Publishing ; 2004
    In:  Applied Physics Letters Vol. 84, No. 14 ( 2004-04-05), p. 2515-2517
    In: Applied Physics Letters, AIP Publishing, Vol. 84, No. 14 ( 2004-04-05), p. 2515-2517
    Abstract: In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg–H complexes and the formation of hydrogenated Ga vacancies (i.e., VGaH2) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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