In:
Applied Physics Letters, AIP Publishing, Vol. 57, No. 4 ( 1990-07-23), p. 354-356
Abstract:
Germane (GeH4) has, for the first time, been used as a reducing agent for tungsten hexafluoride in selectively depositing tungsten on silicon. As shown by x-ray diffraction, films deposited below 400 °C consist of the β-W phase with A15 cubic crystal structure. This A15 structure proved to be stabilized by germanium which is probably incorporated in the film as a hitherto unknown W3Ge compound. Annealing for 1 h at 575 °C did not change the β-W structure to the low-resistivity body-centered-cubic α phase of tungsten. The superconducting transition temperature of the films is ≊3 K. The growth rate dependence on temperature, total pressure, and WF6, GeH4, and H2 partial pressure has been investigated. At deposition temperatures above 400 °C the deposited films consist of a mixture of the β and α-W phase.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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