In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 2R ( 2011-02-01), p. 025001-
Abstract:
We report a facile and novel method for the selective growth of SiC and SiO x nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiO x or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiO x nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiO x nanowires synthesized by direct microwave irradiation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.025001
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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