In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 1R ( 2011-01-01), p. 011501-
Abstract:
The low-frequency noise (LFN) Characteristics of bipolar switching devices consisting of Pt (top)/Al/Pr 0.7 Ca 0.3 MnO 3 (PCMO)/Pt (bottom) were investigated. The noise spectral density in a low frequency range showed a classical 1/ f dependence in both high-resistance state (HRS) and low-resistance state (LRS). The random telegraph noise (RTN) were observed in both HRS and LRS which is due to the AlO x layer acting as traps at the interface between Al and PCMO or traps in PCMO bulk layer. The voltage dependence of the normalized low-frequency spectral density of current fluctuations ( S i / I 2 ) presents that the noise properties can be useful indicators to explain the switching mechanism of Al/PCMO device but new noise models should be suggested for the clear approach to analysis of the conduction characteristics in the devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.011501
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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