In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2B ( 1999-02-01), p. L195-
Abstract:
(Ba, Sr)TiO 3 (BST) films are deposited on 8-inch wafers by the metal organic chemical vapor deposition
(MOCVD) technique at a temperature as low as 400°C to obtain conformal step coverage and prevent oxidation of the diffusion barrier of simple stacked capacitors. The problems of low temperature process
(formation of protrusions, titanium deficiency, severe thickness deviation) could be successfully overcome by proper modification of the CVD system and process conditions. Retrofitting the vaporizer to
obtain flash evaporation of the liquid chemical source and introducing N 2 O gas as an oxidant were highly
effective for reducing the thickness deviation and titanium deficiency. The Pt/BST/Pt capacitor with BST films deposited at 400°C and post-annealed at 700°C for 30 min under nitrogen ambient shows excellent
electrical properties ( T o x ∼6.6 Å, J ∼1×10 -7 A/cm 2 @±1 V), which are satisfactory for application to high
density dynamic random access memory (DRAM) capacitors beyond 256 Mbit generation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L195
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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