In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 4A ( 1989-04-01), p. L690-
Abstract:
The growth process in the initial stage of growth of Ge on (100)Si substrates by gas source molecular beam epitaxy using GeH 4 has been investigated by in-situ reflection high-energy electron diffraction (RHEED) observation. It has been found that the growth mode is the Stranski-Krastanov type, and that the predominant facet of Ge islands is {811} planes at the first step of the island growth but changes to {311} planes with the growth.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.28.L690
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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