In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 16 ( 2008-04-21)
Abstract:
A Schottky-type diode switch consisting of a Pt∕(In,Sn)2O3∕TiO2∕Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55eV) and low potential barrier at the TiO2∕Pt and TiO2∕(In,Sn)2O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6×104 at an applied voltage of ∼1V. When Pt∕TiO2∕Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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