In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 10R ( 2010-10-01), p. 100205-
Abstract:
We have investigated the impact of high- k HfO 2 gate dielectric on the low-frequency noise (LFN) behaviors of amorphous indium–gallium–zinc oxide thin-film transistors by comparing the LFNs of devices with SiO 2 and HfO 2 dielectrics. Measured LFNs are nearly 1/ f type for both devices, but the normalized noise for the HfO 2 device is around one order of magnitude higher than that for the SiO 2 device. The bulk mobility fluctuation is considered as the dominant LFN mechanism in both devices, and the increased LFN in the HfO 2 device is attributed to the enhanced mobility fluctuation by the remote phonon scattering from the HfO 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.100205
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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