In:
Applied Physics Letters, AIP Publishing, Vol. 79, No. 22 ( 2001-11-26), p. 3696-3698
Abstract:
A type of carbon nanotube transistors, which would be suitable for large-scale integration, has been fabricated from vertically aligned carbon nanotubes. We fabricated highly ordered carbon nanotubes, which are selectively grown on the patterned aluminum oxide nanotemplates. Each device element is formed on a vertical carbon nanotube attached to a bottom (source) and upper (drain) electrodes and a gate electrode, which is electrostatically switchable. The transistors can be integrated in large arrays with the potential for tera-level density (2×1011/cm2). The vertical carbon nanotube transistor shows ON/OFF switching operation at 30 K.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2001
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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