In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 5R ( 1989-05-01), p. 841-
Abstract:
Facet formation and stacking fault generation in silicon selective epitaxial growth are studied. On selective epilayer surfaces, a {311} facet and a {111} microfacet are formed on a {100} and a {111} substrate, respectively. In selective epilayers, stacking faults are observed adjacent to the sidewall Facet-free and stacking-fault-free selective epilayers are obtained using the 〈 100 〉 -orinted sidewall at low growth temperatures. These results are explained by an epitaxial growth model at hollow bridge sites. Electrical properties of the interfaces between the selective epilayer and the sidewall are also studied. The 〈 100 〉 -oriented SiO 2 sidewall has better electrical characteristics than other sidewall orientations and sidewall materials.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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