In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 31, No. 14 ( 2017-06-10), p. 1750106-
Abstract:
In this work, the influence of boron atom impurity is investigated on the electronic properties of a single-wall carbon nanotube superlattice which is connected by pentagon–heptagon topological defects along the circumference of the heterojunction of these superlattices. Our calculation is based on tight-binding [Formula: see text]-electron method in nearest-neighbor approximation. The density of states (DOS) and electronic band structure in presence of boron impurity has been calculated. Results show that when boron atom impurity and nanotube atomic layers have increased, electronic band structure and the DOS have significant changes around the Fermi level.
Type of Medium:
Online Resource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S0217979217501065
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2017
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