In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 34, No. 4 ( 2016-07-01)
Abstract:
This letter reports an AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuit (MMIC) operating at V-band using advanced gate processing technology. The AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) employed a gate length of 100 nm with a double-deck shaped (DDS) field-plate, which resulted in a cut-off frequency of 68 GHz and a maximum oscillation frequency of 160 GHz at the drain voltage of 15 V with significant reduction in gate resistance and improvement of current collapse phenomenon. A 60 GHz three-stage PA MMIC composed of two 4 × 37 μm and an 8 × 37 μm AlGaN/GaN-on-Si HEMTs successfully demonstrated using the DDS field-plate gate technology, which exhibited a continuous wave output power of & gt;23.5 dBm at the drain voltage of 18 V at 58 GHz. This is the highest output power performance for V-band power amplification based on AlGaN/GaN-on-Si technology.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2016
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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