In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 8S ( 2013-08-01), p. 08JN22-
Abstract:
The effect of extrinsic photon recycling (EPR) in p-type gallium nitride (p-GaN), namely, increased ionization ratio ( R ) of magnesium acceptors owing to radiative recombination, was quantitatively investigated. The lateral extension ( L ) of EPR was determined by using transmission-line-model (TLM) patterns, formed with GaN p–n junction epitaxial layers on free-standing substrates, as well as by using device simulation. With increasing vertical current ( I V ) of the p–n junction, lateral current ( I L ) in the p-GaN layer (magnesium concentration: N Mg = 5×10 17 cm -3 ) was found to increase within L of 10 µm from the edge of the TLM electrodes; the measured I L corresponded to a large R , namely, 30%. This lateral extension will contribute to reducing base resistance and enhancing conductivity modulation of GaN bipolar power-switching devices for power-electronics applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.08JN22
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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