In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4L ( 2005-04-01), p. L485-
Abstract:
The high-energy electron irradiation effect of GaAs solar cells on Si substrate has been described and the results were compared with GaAs solar cell on GaAs substrates. The solar cells were irradiated with 1 MeV electron in the range of fluences from 1 ×10 13 cm -2 to 1 ×10 16 cm -2 . The solar cell parameters such as short-circuit current ( I sc ), open circuit-voltage ( V oc ) and conversion efficiency were studied under dark and AM 0 conditions. The degradation rate of V oc and P max of GaAs/GaAs solar cell is faster than GaAs/Si solar cell after the fluences higher than 10 15 cm -2 . The slow degradation of GaAs/Si solar cell has been attributed to slow generation of As vacancy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L485
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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