In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 10S ( 2013-10-01), p. 10MB09-
Abstract:
The advanced electron beam melting (EBM) system with the combination of vacuum refining and directional solidification (DS) performed the purification of large amounts of metallurgical grade silicon (MG-Si). In order to increase grain size or to align columnar grains being parallel to DS pulling direction in Si ingots, non-irradiated inner diameters in an EB pattern in the DS process were varied at a range of 5–35 mm. Average grain size increased with increasing non-irradiated inner diameter due to a smaller temperature gradient during the solidification of Si melts. However, the slope of the grain boundary inclined towards the ingot axis, which led to the formation of a triple junction in the ingot center in the case of large non-irradiated inner diameter. This happened despite there being a large temperature gradient due to the turbulent flow in the pool. This work reported that a purity of 99.8% for MG-Si was improved to above 99.999% with an ingot yield of 90% for 1 h.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.10MB09
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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