In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3S ( 1998-03-01), p. 1522-
Abstract:
The cross-sectional potential images of the GaAs/AlAs multiple quantum wells and InAlAs/InGaAs heterostructures have been successfully obtained by Kelvin probe force microscopy (KFM). It was shown that the smaller amplitude of the alternating voltage ( V ac ) applied to detect the electrostatic force during the KFM measurements gave a better potential profile of the heterostructures. The spatial resolution of the present KFM was investigated by measuring the InAlAs/InGaAs layered structures with various thicknesses. The minimum thickness of the InAlAs layer distinguished by the KFM was 40 nm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.1522
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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