In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 8S ( 2013-08-01), p. 08JE22-
Abstract:
Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-µm- and 200-nm-thick Al 0.5 Ga 0.5 N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-µm-thick Al 0.5 Ga 0.5 N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al 0.5 Ga 0.5 N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al 0.5 Ga 0.5 N sample.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.08JE22
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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