In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 33, No. 2 ( 2015-03-01)
Kurzfassung:
Fully transparent amorphous-InGaZnO thin-film transistors (TFTs) with double-gate (DG) configuration were fabricated. Both top-gate and bottom-gate (BG) TFT fabricated with a single gate-stack structure were found to exhibit sound device characteristics with μsat of 17.0 and 18.1 cm2 V−1 s−1, respectively. Confirmed benefits of DG configuration include improved current drivability and threshold voltage tunability. Further, controlling the fixed voltage bias to the BG was observed to enhance device stability under negative-bias-illumination-stress conditions.
Materialart:
Online-Ressource
ISSN:
2166-2746
,
2166-2754
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2015
ZDB Id:
3117331-7
ZDB Id:
1475429-0
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