In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4S ( 2004-04-01), p. 1734-
Abstract:
An ultra low dark current pixel has been developed for embedded active-pixel complementary metal oxide semiconductor (CMOS) image sensors using a standard CMOS logic process. Conventional CMOS image sensors suffer from high dark current as a result of the high interface state density at the field oxide edge. In the proposed novel pixel, the photo-sensing diode is surrounded by a ring-shaped poly-silicon reset gate which isolates the photo-sensing area from the field oxide edge. Hence, the dark current level can be effectively reduced. However, in the novel pixel, the large overlap capacitance between the reset poly-gate ring and the sensing node can severely affect the output swing. To optimize this novel pixel, the poly-silicon gate is limited to isolate the photo-sensing area from the field oxide edge. Furthermore, a constant bias voltage applied to the poly-silicon gate provides an additional advantage of extended dynamic range. The effects of technology scaling on the pixel performance are investigated as well.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1734
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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