In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 6R ( 2012-06-01), p. 060202-
Abstract:
In this paper, we present the development of a mesa isolation process for AlSb/InAs high electron mobility transistors (HEMTs) using inductively coupled plasma (ICP) etching with BCl 3 gas. Devices with different gate lengths ( L g : 60, 100, and 200 nm) fabricated by this dry etching technique show good DC and RF performances. With an appropriate L g /gate-channel distance ratio, the 200-nm-gate has very high peak transconductances of 781 mS/mm at V DS = 0.1 V and 2000 mS/mm at V DS = 0.5 V. Moreover, an extrinsic current gain cutoff frequency of 137 GHz and maximum oscillation frequency of 97 GHz were achieved at a drain bias voltage V DS = 0.3 V, indicating the great potential for such a device operating at high frequency with extremely low DC power consumption.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.060202
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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