In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 4S ( 2016-04-01), p. 04EG04-
Abstract:
Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La 2 O 3 /SiO 2 AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La 2 O 3 -based (La 2 O 3 /HfO 2 , La 2 O 3 /CeO 2 and single La 2 O 3 ) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La 2 O 3 /SiO 2 MOS-HEMT were demonstrated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.04EG04
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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