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  • 1
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 2013
    In:  The European Physical Journal B Vol. 86, No. 2 ( 2013-2)
    In: The European Physical Journal B, Springer Science and Business Media LLC, Vol. 86, No. 2 ( 2013-2)
    Type of Medium: Online Resource
    ISSN: 1434-6028 , 1434-6036
    RVK:
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2013
    detail.hit.zdb_id: 1459068-2
    detail.hit.zdb_id: 1397768-4
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  • 2
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 36, No. 1 ( 2018-01-01)
    Abstract: Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike carbon (DLC)] coatings, and uncoated Si. The formation of the tribolayer in the contact area was the dominating phenomenon for friction and wear performance. Hardness, elastic modulus, and crystallinity of the materials were also investigated. The nitride coatings had the most favorable friction and wear performance of the ALD coatings, yet lower friction coefficient was measured with DLC a-C:H coating. These results help us to take steps toward improved coating solutions in, e.g., MEMS applications.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2018
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 32, No. 1 ( 2014-01-01)
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 32, No. 1 ( 2014-01-01)
    Abstract: The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al2O3 films having thickness varying from 10 to 600 nm were deposited on a single-side polished silicon wafer at 300 °C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8 nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20 nm and the nanoindentation hardness is about 11 GPa independent of film thickness.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 2008
    In:  Applied Physics Letters Vol. 93, No. 2 ( 2008-07-14)
    In: Applied Physics Letters, AIP Publishing, Vol. 93, No. 2 ( 2008-07-14)
    Abstract: The magnetic shape memory (MSM) effect was observed in Ni–Mn–Ga freestanding thin foils down to 90μm in thickness using top-down approach. The foils were prepared by thinning the bulk crystals exhibiting MSM effect. The effect was evaluated from the magnetization curves. The significant decrease in magnetic field needed to initiate the MSM effect (magnetic field induced strain or martensite structure reorientation) was observed for the studied foils down to μ0H=0.088T or H=70kA∕m. Observation suggests that the pinning of twin boundaries on the internal obstacles rather than pinning on surface lowers twin boundaries’ mobility.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 35, No. 1 ( 2017-01-01)
    Abstract: Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110–300 °C), film thickness (20–300 nm), bilayer thickness (0.1–100 nm), and TiO2 content (0%–100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2017
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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