In:
Applied Physics Letters, AIP Publishing, Vol. 83, No. 16 ( 2003-10-20), p. 3344-3346
Abstract:
Semiconductor–metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. Using the finite element method, we study the EMR effect in rectangular semiconductor–metal hybrid structures and investigate the effects of material parameters and of device geometry. We find that the EMR device exhibits inverse scalability, i.e., the output characteristics improve with decreasing device width. This is promising for miniaturized magnetic-field sensors like, e.g., read heads. Using realistic device parameters, we predict an optimized performance as a sensor for a width-to-length ratio of 0.025.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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