In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 4 ( 2008-07-01), p. L33-L35
Abstract:
The authors report on the synthesis, electrical characterization, and high temperature electrochemical conductivity of nitrogen passivated crystalline rare-earth doped hafnia thin films with high-dielectric constant (∼30) and low leakage currents. High temperature electrochemical conductivity of the Re-doped nitrided hafnia thin films are comparable to one another. The results are of potential significance to synthesis of crystalline oxides on semiconductor surfaces with tailored functionality.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2008
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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